发明名称 Pattern defect inspection using data based on secondary electron from pattern
摘要 A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.
申请公布号 US9153419(B2) 申请公布日期 2015.10.06
申请号 US201113071360 申请日期 2011.03.24
申请人 Kabushiki Kaisha Toshiba 发明人 Mitsui Tadashi
分类号 H01J37/28;H01J37/22 主分类号 H01J37/28
代理机构 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. 代理人 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
主权项 1. A pattern defect inspection method comprising; generating a central line of a feature of an inspection target pattern based on first data on the inspection target pattern; generating irradiation point track data for use in controlling scanning with an electron beam, based on the central line, the irradiation point track data comprising data on a track of irradiation points of the electron beam to the inspection target pattern; irradiating the electron beam to the inspection target pattern in accordance with the irradiation point track data; detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam; acquiring second data representing one-dimensional intensity distribution of a signal of the detected secondary electrons; and detecting an abnormal point on the central line by analyzing the second data and outputting the abnormal point as a defect of the inspection target pattern.
地址 Tokyo JP