Spacer elements for semiconductor device

摘要

The present disclosure describes a semiconductor device including a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is disposed on the substrate abutting the first gate stack. A second spacer element is adjacent the first spacer element. A source/raised drain is provided adjacent the gate stack. A conductive feature (e.g., silicide) is disposed on the source/drain and laterally contacts sidewalls of the second spacer element. In an embodiment, a contact directly interfaces with the second spacer element.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first gate stack disposed on the semiconductor substrate; a first spacer element abutting the first gate stack; a second spacer element adjacent to the first spacer element, wherein the first spacer element has a first height and the second spacer element has a second height, and the first height is greater than the second height; a first feature disposed on the semiconductor substrate, wherein the second spacer element interposes the first spacer element and the first feature, and wherein the first feature laterally contacts the second spacer element; and a contact feature partially disposed on a top surface of the first feature, wherein the contact feature has a bottom surface, wherein a first portion of the bottom surface of the contact feature contacts the second spacer element, and wherein a second portion of the bottom surface of the contact feature contacts the top surface of the first feature.