发明名称 Laser diode assembly and semiconductor optical amplifier assembly
摘要 A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element. A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.
申请公布号 US9153938(B2) 申请公布日期 2015.10.06
申请号 US201113248741 申请日期 2011.09.29
申请人 Sony Corporation;Tohoku University 发明人 Yokoyama Hiroyuki;Kono Shunsuke;Kuramoto Masaru
分类号 H01S5/065;B82Y20/00;H01S5/14;H01S5/00;H01S5/028;H01S5/042;H01S5/0625;H01S5/10;H01S5/16;H01S5/20;H01S5/22;H01S5/30;H01S5/32;H01S5/343;H01S5/50 主分类号 H01S5/065
代理机构 K&L Gates LLP 代理人 K&L Gates LLP
主权项 1. A laser diode assembly comprising: a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation; an external resonator; and a wavelength selective element positioned outside an optical path between the mode-locked laser diode device and the external resonator, wherein a light output spectrum of the pulsed laser beam emitted through the external resonator from the mode-locked laser diode device contains a plurality of peaks, and one of the peaks including a longer wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.
地址 Tokyo JP