发明名称 IC embedded substrate and method of manufacturing the same
摘要 Disclosed herein is an IC embedded substrate that includes a core substrate having an opening, an IC chip provided in the opening, a lower insulating layer, and upper insulating layer. The IC chip and the core substrate is sandwiched between the lower insulating layer and the upper insulating layer. The upper insulating layer is formed in such a way as to fill a gap between a side surface of the IC chip and an inner peripheral surface of the opening of the core substrate. A first distance from the upper surface of the IC chip to an upper surface of the upper insulating layer is shorter than a second distance from the upper surface of the core substrate to the upper surface of the upper insulating layer.
申请公布号 US9153553(B2) 申请公布日期 2015.10.06
申请号 US201414555325 申请日期 2014.11.26
申请人 TDK CORPORATION 发明人 Tsuyutani Kazutoshi;Katsumata Masashi
分类号 H01L23/00;H01L21/56;H01L23/522;H01L23/31 主分类号 H01L23/00
代理机构 Young Law Firm, P.C. 代理人 Young Law Firm, P.C.
主权项 1. An IC embedded substrate comprising: a lower insulating layer; a lower wiring layer formed on a lower surface of the lower insulating layer; a core substrate formed on an upper surface of the lower insulating layer; an IC chip mounted face-up on the upper surface of the lower insulating layer; an upper insulating layer covering an upper surface of the core substrate and an upper surface of the IC chip; an upper wiring layer formed on an upper surface of the upper insulating layer; and a via-hole conductor passing through the upper insulating layer to connect the upper wiring layer and the IC chip, wherein the core substrate includes an opening, the IC chip is provided in the opening, the upper insulating layer is formed in such a way as to fill a gap between a side surface of the IC chip and an inner peripheral surface of the opening of the core substrate, and a first distance from the upper surface of the IC chip to the upper surface of the upper insulating layer is shorter than a second distance from the upper surface of the core substrate to the upper surface of the upper insulating layer.
地址 Tokyo JP