Semiconductor device and manufacturing method thereof

摘要

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

主权项

1. A semiconductor device comprising:
a semiconductor film comprising an impurity region to which an impurity imparting one conductive type is added; and a wiring over the semiconductor film, wherein the wiring comprises:
a diffusion prevention film comprising a conductive metal oxide; anda conductive film over the diffusion prevention film, wherein the diffusion prevention film and the impurity region are in contact with each other, and wherein the conductive metal oxide comprises fluorine or chlorine.