Fin-last finFET and methods of forming same

摘要

Embodiments of the present disclosure are a FinFET device, and methods of forming a FinFET device. An embodiment is a method for forming a FinFET device, the method comprising forming a semiconductor strip over a semiconductor substrate, wherein the semiconductor strip is disposed in a dielectric layer, forming a gate over the semiconductor strip and the dielectric layer, and forming a first recess and a second recess in the semiconductor strip, wherein the first recess is on an opposite side of the gate from the second recess. The method further comprises forming a source region in the first recess and a drain region in the second recess, and recessing the dielectric layer, wherein a first portion of the semiconductor strip extends above a top surface of the dielectric layer forming a semiconductor fin.

主权项

1. A FinFET device comprising:
a dielectric layer on a semiconductor substrate; a semiconductor fin extending from the semiconductor substrate, wherein the semiconductor fin is disposed in the dielectric layer; a first source region and a first drain region disposed in recesses in the semiconductor fin, wherein the first source region and the first drain region comprise a first epitaxial material, wherein the first source region and the first drain region have sidewalls that are substantially orthogonal to a top surface of the semiconductor substrate; a first channel region in the semiconductor fin, wherein the first channel region is laterally between the first source region and the first drain region; and a first gate structure over the semiconductor fin, wherein the first gate structure is over the first channel region.