Semiconductor device

摘要

A semiconductor device includes a plurality of epitaxial layers stacked over a supportive substrate, a first buried impurity region formed to share the supportive substrate with a lowermost epitaxial layer among the multiple epitaxial layers, one or more second buried impurity regions formed to be coupled with the first buried impurity region and share an Nth epitaxial layer and an (N+1)th epitaxial layer among the multiple epitaxial layers, where N is a natural number, a body region formed in an uppermost epitaxial layer among the multiple epitaxial layers and a deep well formed in the uppermost epitaxial layer to surround the body region and to be coupled with the second buried impurity regions that share the uppermost epitaxial layer.

主权项

1. A semiconductor device, comprising:
a plurality of epitaxial layers stacked over a substrate; a first buried impurity region formed to share the substrate with a lowermost epitaxial layer among the plurality of the epitaxial layers; one or more second buried impurity regions formed to be coupled with the first buried impurity region and formed between an Nth epitaxial layer and an (N+1)th epitaxial layer among the plurality of the epitaxial layers; a body region formed in an uppermost epitaxial layer among the plurality of the epitaxial layers; a deep well formed in the uppermost epitaxial layer to surround the body region and to be coupled with the second buried impurity regions; a gate formed over the uppermost epitaxial layer; a buried insulation layer formed in the deep well; and a drain region formed in a drift region to be spaced apart from the gate by a predetermined gap, wherein the second buried impurity regions are disposed not to overlap the first portion of the buried insulation layer, wherein the drain region is overlapped to the second buried impurity regions.