Semiconductor device and a method for manufacturing a semiconductor device

摘要

There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.

主权项

1. A semiconductor device, comprising:
a substrate; a multilayer wiring layer disposed over the substrate; a first transistor disposed in the multilayer wiring layer; and a second transistor disposed in a different layer from a layer including the first transistor disposed therein of the multilayer wiring layer, wherein the first transistor and the second transistor are coupled to each other through source/drain electrodes of each of the first transistor and the second transistor being coupled to each other through a first via, and a gate electrode of the first transistor is coupled to a gate electrode of the second transistor through a second via thereby forming an inverter from the first transistor and the second transistor.