SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to prevent change of properties of a semiconductor device. The semiconductor device includes: a plug (PR1) formed in an inter-layer insulation film (II1); a lower electrode (LE1) which is installed on the plug (PR1) and is also connected to the plug (PR1); a middle layer (ML1) which is installed on the lower electrode (LE1) and consists of metal oxide; and an upper electrode (UE1) installed on the middle layer (ML1). The middle layer (ML1) has a lamination region (1), which comes in contact with the lower electrode (LE1) and the upper electrode (UE1). At least a portion of the lamination region (LR1) is not overlapped with the plug (PR1). At least a portion of the plug (PR1) is not overlapped with the lamination region (LR1).