Metal insulator metal capacitor and method for making the same

摘要

A semiconductor device includes one or more metal-insulator-metal (MiM) capacitors. The semiconductor device includes a bottom electrode, a dielectric layer located above, and in physical contact with, the bottom electrode, a top electrode located above, and in physical contact with, the dielectric layer, a first top contact contacting the top electrode, a first bottom contact contacting the bottom electrode from a top electrode direction, a first metal bump connecting to the top contact, and a second metal bump connecting to the bottom contact. The top electrode has a smaller area than the bottom electrode. The bottom electrode, the dielectric layer, and the top electrode is a MiM capacitor. Top electrodes of a number of MiM capacitors and bottom electrodes of a number of MiM capacitors are daisy chained to allow testing of the conductivity of the electrodes.

主权项

1. A semiconductor device comprising:
a bottom electrode; a dielectric layer located above, and in physical contact with, the bottom electrode; a top electrode located above, and in physical contact with, the dielectric layer, the top electrode having an opening, wherein the bottom electrode, the dielectric layer, and the top electrode is a first metal-insulator-metal (MiM) capacitor; a first top contact interconnect electrically coupling the top electrode to a top electrode of another MiM capacitor, the first top contact interconnect being completely covered by a dielectric material; a first top contact contacting the top electrode; a first bottom contact contacting the bottom electrode from a top electrode direction through the opening in the top electrode; a first metal bump connecting to the top contact; and a second metal bump connecting to the bottom contact.