Method of depositing a film and film deposition apparatus

摘要

A disclosed method of depositing a silicon film on a substrate mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a cylindrical chamber set to have a first temperature capable of cutting a Si—H bond includes a molecular layer deposition step of supplying a Si2H6 gas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiH3 molecular layer on a surface of the substrate, and a hydrogen desorption step of causing the substrate, on a surface of which the SiH3 molecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate.

主权项

1. A method of depositing a film for forming a silicon film on a substrate, which is mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a chamber substantially in a cylindrical shape set to have a first temperature capable of cutting a Si—H bond, the method comprising:
a molecular layer deposition step of supplying a Si2H6 gas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiH3 molecular layer on a surface of the substrate; and a hydrogen desorption step of causing the substrate, on the surface of which the SiH3 molecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate.