Exposure apparatus and device fabrication method

摘要

An exposure apparatus and a fabrication method thereof include an obtaining unit configured to obtain data of a first imaging position at which light from a first pattern having, as a longitudinal direction thereof, a first direction perpendicular to an optical axis of a projection optical system forms an image via the projection optical system, and data of a second imaging position at which light from a second pattern having, as a longitudinal direction thereof, a second direction which is not parallel to the first direction and is perpendicular to the optical axis forms an image via the projection optical system, when the first pattern and the second pattern are respectively placed on an object plane of the projection optical system, and a control unit configured to control a stage so that a substrate is positioned at a target position of the substrate along the optical axis.

主权项

1. An exposure apparatus comprising:
a projection optical system configured to project a pattern of a mask onto a substrate; a stage configured to move the substrate; an obtaining unit configured to obtain data of a first imaging position at which light from a first pattern having, as a longitudinal direction thereof, a first direction perpendicular to an optical axis of the projection optical system forms an image via the projection optical system, and data of a second imaging position at which light from a second pattern having, as a longitudinal direction thereof, a second direction which is not parallel to the first direction and is perpendicular to the optical axis of the projection optical system forms an image via the projection optical system, when the first pattern and the second pattern are respectively placed on an object plane of the projection optical system; and a control unit configured to control the stage so that the substrate is positioned at a target position of the substrate along the optical axis in projecting the pattern of the mask onto the substrate, wherein the control unit determines the target position of the substrate along the optical axis based on the first imaging position and the second imaging position in a time region where a part of or an entire depth-of-focus region at the first imaging position overlaps a depth-of-focus region at the second imaging position, and interrupts projection of the pattern of the mask onto the substrate when the depth-of-focus region at the first imaging position and the depth-of-focus region at the second imaging position do not overlaps each other, when a mixed pattern which combines a pattern having the first direction as a longitudinal direction thereof and a pattern having the second direction as a longitudinal direction thereof is determined as the pattern of the mask and projected onto the substrate.