Polishing composition, polishing method using same, and method for producing semiconductor device

摘要

The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below.;
In the formulas, X1 and X2 are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.

主权项

1. A polishing composition used in polishing a surface of an object to be polished that includes a first portion comprised of copper or a copper alloy and a second portion comprised of tantalum, tantalum nitride, a tantalum alloy, titanium, titanium nitride, a titanium alloy, tungsten, tungsten nitride, or a tungsten alloy, the composition comprising an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below,where X1 and X2 are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group,
wherein the polishing composition has a polishing rate of the second portion higher than that of the first portion.