发明名称 Target for extreme ultraviolet light source
摘要 Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.
申请公布号 US9155179(B2) 申请公布日期 2015.10.06
申请号 US201414550421 申请日期 2014.11.21
申请人 ASML Netherlands B.V. 发明人 Tao Yezheng;Rafac Robert J.;Fomenkov Igor V.;Brown Daniel J. W.;Golich Daniel J.
分类号 H05G2/00;G21K5/04;G21K5/08;H01S3/10;G21K5/02 主分类号 H05G2/00
代理机构 DiBerardino McGovern IP Group LLC 代理人 DiBerardino McGovern IP Group LLC
主权项 1. A method comprising: providing a target; directing a first amplified light beam toward the target to cause an interaction between the target and the first amplified light beam, the interaction between the target and the first amplified light beam forming a first plasma and a remaining portion of the target; allowing the first plasma to expand to form a collection of pieces from the remaining portion, the collection of pieces extending along the direction of propagation of the first amplified light beam; and directing a second amplified light beam toward the collection of pieces, the second amplified light beam having an energy sufficient to convert at least some of the pieces of the collection of pieces into a plasma that emits EUV light, wherein the collection of pieces comprises non-ionized pieces of a target material that emits EUV light when in a plasma state.
地址 Veldhoven NL