Solid state imaging device

摘要

According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

主权项

1. A solid state imaging device comprising:
a pixel array unit in which pixels that accumulate photoelectrically-converted charge are arranged in a matrix form; an image CDS(Correlated Double Sampling) processing unit configured to output a pixel signal based on a difference between a pixel voltage read from one of the pixels during a reset period and a pixel voltage read from the one of the pixels during a signal read period; a temperature sensor configured to output a diode voltage when a diode current is changed; a temperature CDS processing unit configured to output a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed; and a timing generator configured to control the reset period, the signal read period, and timing of changing the diode current of the temperature sensor, wherein temperature measurement processing is performed in a first vertical blanking period in one vertical period, and imaging process is performed in a remaining second vertical blanking period and an effective pixel period in the vertical period, and wherein an analog gain of the temperature measurement processing is set higher than that of the imaging process and the analog gain of the imaging process is controlled according to an amount of incident light.