Semiconductor device for preventing a progression of a crack in a solder layer and method of manufacturing the same

摘要

A semiconductor device has a connection structure in which a power semiconductor chip is mounted on an insulating substrate having conductor patterns bonded to front and rear surfaces thereof and the insulating substrate is bonded to a heat-dissipating base member to dissipate heat generated from the power semiconductor chip to outside. The conductor pattern bonded to the heat-dissipating base member is formed such that a thickness of a circumferential portion of a bonding surface of the conductor pattern bonded to the insulating substrate is less than that of a center of the bonding portion.

主权项

1. A semiconductor device comprising:
an insulating substrate having first and second conductor patterns, each having a bonding portion, the first conductor pattern being bonded to a front surface thereof and the second conductor pattern having four corner portions and being bonded to a rear surface thereof, a power semiconductor chip mounted on the first conductor pattern, and a heat-dissipating base member bonded to the second conductor pattern to dissipate heat generated from the power semiconductor chip to outside, wherein the second conductor pattern is formed such that a circumferential portion of the bonding portion of the second conductor pattern has a thickness less than that of a center of the bonding portion thereof, and the second conductor pattern has a curved surface at each of the four corner portions such that a circumference of each of the four corner portions is outwardly curved.