| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes a semiconductor substrate provided with a predetermined element and having wirings formed on its main surface connected to back wirings by a plurality of through silicon vias (TSVs), and a conductive cover which covers the main surface of the semiconductor substrate. The semiconductor substrate and the conductive cover are bonded to each other with a conductive bonding member. The TSV bonded to the conductive cover with the conductive bonding member is connected to an external electrode pad to which a ground potential is supplied. | ||
| 申请公布号 | US9153510(B2) | 申请公布日期 | 2015.10.06 |
| 申请号 | US201314024212 | 申请日期 | 2013.09.11 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Sugimoto Masafumi;Hosomi Eiichi;Murakawa Atsushi;Takahashi Kazumi;Higuchi Kazuhito;Obata Susumu |
| 分类号 | H01L21/50;H01L23/06;H01L21/52;H01L23/48;H01L23/00;H01L23/04;H01L23/552;H01L21/56 | 主分类号 | H01L21/50 |
| 代理机构 | White & Case LLP | 代理人 | White & Case LLP |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface and including a predetermined element formed on the first main surface and a plurality of through silicon vias (TSVs) configured to electrically connect a plurality of wirings formed on the first main surface to a plurality of electrodes correspondingly formed on the second main surface; a conductive cover configured to cover the first main surface of the semiconductor substrate, the conductive cover being provided with a predetermined concave portion facing the first main surface of the semiconductor substrate; and a conductive bonding member configured to bond the conductive cover and one wiring of the wirings formed on the first main surface of the semiconductor substrate to each other. | ||
| 地址 | Tokyo JP | ||