发明名称 Optoelectronic semiconductor component
摘要 An optoelectronic semiconductor component includes a carrier which has an upper side and a lower side opposite to the upper side. At least one radiation-emitting semiconductor device is disposed on the upper side and has a radiation emission surface, through which at least a portion of the electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device. A radiation-absorbing layer is arranged to absorb ambient light, which impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places.
申请公布号 US9153735(B2) 申请公布日期 2015.10.06
申请号 US201113825600 申请日期 2011.09.21
申请人 OSRAM OPTO SEMICONDUCTOR GMBH 发明人 Schneider Markus;Ramchen Johann;Wittmann Michael
分类号 H01L33/08;H01L33/56;H01L23/00;H01L25/075;H01L25/16;H01L33/54;H01L33/60;H01L33/62 主分类号 H01L33/08
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. Optoelectronic semiconductor component, comprising: a carrier having an upper side and a lower side opposite to the upper side; at least one radiation-emitting semiconductor device which is disposed on the upper side and has a radiation emission surface, through which at least a portion of the electromagnetic radiation, which is generated during operation of the radiation emitting semiconductor device, leaves the radiation-emitting semiconductor device; a radiation-absorbing layer which is arranged to absorb ambient light, which impinges upon the optoelectronic semiconductor component, such that an outer surface of the optoelectronic semiconductor component facing away from the carrier appears black at least in places; and a radiation-reflecting layer which covers the lateral surfaces of the semiconductor device in places and which is disposed in a vertical direction between the carrier and the radiation-absorbing layer, wherein the radiation-absorbing layer completely encircles the radiation-emitting semiconductor device in a lateral direction and is in direct contact, at least in places, with lateral surfaces of the radiation-emitting semiconductor device, wherein the outer surface of the semiconductor component is formed at least in places by an outer surface of the radiation-absorbing layer, and wherein the radiation emission surface is free from the radiation-absorbing layer.
地址 Regensburg DE