Semiconductor device

摘要

A semiconductor device includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor channel layer, a first passivation layer and a second passivation layer. The gate is formed on the substrate. The insulating layer covers the gate electrode. The source electrode and the drain electrode are positioned on the insulating layer. The semiconductor channel layer is disposed on the insulating layer, and connects the source electrode and the drain electrode. The first passivation layer covers the source electrode, the drain electrode and the semiconductor channel layer. The first passivation layer includes silicon oxide. The second passivation layer is disposed on the first passivation layer. The second passivation layer includes silicon nitride that has a hydrogen concentration of about 2.0×1022 atom/cm3 to about 3.11×1022 atom/cm3.

主权项

1. A semiconductor device, comprising:
a substrate; a gate electrode disposed on the substrate; an insulating layer covering the gate electrode; a source electrode and a drain electrode, wherein the source electrode and the drain electrode are positioned on the insulating layer; a semiconductor channel layer disposed on the insulating layer, wherein the semiconductor channel layer connects the source electrode and the drain electrode; a first passivation layer covering the semiconductor channel layer, the source electrode and the drain electrode, wherein the first passivation layer includes silicon oxide; and a second passivation layer disposed on the first passivation layer, wherein the second passivation layer includes silicon nitride, and the second passivation layer has a hydrogen concentration of about 2.0×1022 atom/cm3 to about 3.11×1022 atom/cm3.