Apparatus and method for FinFETs

摘要

A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.

主权项

1. A method comprising:
forming a first isolation region in a substrate; forming a second isolation region in the substrate; forming a recess between the first isolation region and the second isolation region by removing a portion of the substrate; performing a surface treatment on the recess to form a cloak-shaped recess, wherein the cloak-shaped recess extends into the first isolation region and the second isolation region; and forming a cloak-shaped active region through an epitaxial growth.