发明名称 Bumpless build-up layer package including an integrated heat spreader
摘要 An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.
申请公布号 US9153552(B2) 申请公布日期 2015.10.06
申请号 US201414570785 申请日期 2014.12.15
申请人 Intel Corporation 发明人 Teh Weng Hong;Kulkarni Deepak;Chiu Chia-Pin;Harirchian Tannaz;Guzek John S.
分类号 H01L21/44;H01L21/48;H01L23/00;H01L23/367;H01L23/433;H01L23/498;H01L23/538;H01L23/36;H01L21/56;H01L23/34 主分类号 H01L21/44
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method of forming a microelectronic die package, comprising: stacking a lower die surface of a microelectronic die onto a heat spreader in thermal communication with the heat spreader; forming a cavity through the heat spreader, wherein the cavity forms a direct interface with a portion of the lower die surface of the microelectronic die; forming an encapsulation material around the microelectronic die and the heat spreader; building up a plurality of build-up layers onto an upper die surface of the microelectronic die, opposite the lower die surface; and forming a plurality of conductive traces disposed on the build-up layers in electrical communication with an active region of the microelectronic die.
地址 Santa Clara CA US