Integrated circuit package including in-situ formed cavity

摘要

A flip chip packaged component includes a die having a first surface and a dielectric barrier disposed on the first surface of the die. The dielectric barrier at least partially surrounds a designated location on the first surface of the die. A plurality of bumps is disposed on the first surface of the die on an opposite side of the dielectric barrier from the designated location. The flip chip packaged component further includes a substrate having a plurality of bonding pads on a second surface thereof. A cavity is defined by the first surface of the die, the dielectric barrier, and the substrate. A molding compound encapsulates the die and at least a portion of the substrate.

主权项

1. A flip chip packaged component comprising:
a die having a first surface; a dielectric barrier disposed on the first surface of the die, the dielectric barrier at least partially surrounding a designated location on the first surface of the die; a plurality of bumps disposed on the first surface of the die, the plurality of bumps being located on an opposite side of the dielectric barrier from the designated location; a substrate including a plurality of bonding pads on a second surface of the substrate, the die bonded to the substrate in a flip chip configuration, the plurality of bumps bonded to the plurality of bonding pads, the dielectric barrier contacting the substrate; a cavity defined by the first surface of the die, the dielectric barrier, and the substrate, the cavity being proximate the designated location on the first surface of the die; and a molding compound encapsulating the die and at least a portion of the substrate, the molding compound underfilling a portion of the die and contacting the opposite side of the dielectric barrier from the designated location, the dielectric barrier preventing the molding compound from entering the cavity.