Semiconductor device manufacturing method

摘要

An objective of the present invention is to increase production efficiency of high-performance flexible semiconductor devices. A semiconductor device manufacturing method includes: a step of forming an insulating substrate (10) which is configured of glass substrates (11, 13) with a thermal expansion coefficient which approximates the thermal expansion coefficient of a single-crystal silicon substrate (20) and a plastic substrate (12) which is positioned between both of the glass substrates; and a step of, after bonding the insulating substrate (10) with the single-crystal silicon substrate (20), separating a portion of the single-crystal silicon substrate (20) with heat processing, and forming a single-crystal silicon layer (14) upon the glass substrate (11).

主权项

1. A method of manufacturing a semiconductor device, comprising:
implanting ions into a single-crystal semiconductor substrate to form a separation layer at a prescribed depth therein; forming an insulating substrate that includes a first substrate, a third substrate, and a second substrate disposed therebetween, the first substrate and the third substrate having a coefficient of thermal expansion similar to a coefficient of thermal expansion of said single-crystal semiconductor substrate, the insulating substrate having flexible characteristics; bonding the single-crystal semiconductor substrate to the insulating substrate such that the single-crystal semiconductor substrate and the first substrate are joined together; and forming a single-crystal semiconductor layer on the insulating substrate by separating a portion of the single-crystal semiconductor substrate from the separation layer through heat treatment.