发明名称 Processing systems and methods for halide scavenging
摘要 Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
申请公布号 US9153442(B2) 申请公布日期 2015.10.06
申请号 US201414248143 申请日期 2014.04.08
申请人 Applied Materials, Inc. 发明人 Wang Anchuan;Chen Xinglong;Li Zihui;Hamana Hiroshi;Chen Zhijun;Hsu Ching-Mei;Huang Jiayin;Ingle Nitin K.;Lubomirsky Dmitry;Venkataraman Shankar;Thakur Randhir
分类号 H01L21/263;H01L21/67;H01L21/02;H01L21/677;H01L21/306;H01L21/3065;H01L21/683;H01J37/32;H01L21/3213;H01L21/311 主分类号 H01L21/263
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A method of processing a substrate, the method comprising: transferring a substrate from a holding chamber to a loading chamber through a factory interface with a first transfer device; evacuating the loading chamber such that the substrate is maintained in a vacuum environment; transferring the substrate from the evacuated loading chamber to a process chamber with a second transfer device; transferring the substrate from the process chamber to the loading chamber with the second transfer device; removing the vacuum conditions from the loading chamber; transferring the substrate to a wet etching station using the first transfer device, wherein the wet etching station is coupled with the factory interface and is accessible by the first transfer device; and transferring the substrate from the loading chamber to a storage chamber with the first transfer device.
地址 Santa Clara CA US