Modification of silicon layers formed from silane-containing formulations

摘要

The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.

主权项

1. A process for preparing a silicon layer on a substrate, the silicon layer comprising silicon and a surface suboxide structure, the process comprising:
(I) applying a formulation comprising at least one silicon compound to the substrate, to obtain a coated substrate; (II) irradiating, thermally treating, or irradiating and thermally treating the coated substrate to form a silicon layer; (III) treating the silicon layer with at least one oxygen source selected from the group consisting of elemental oxygen, O3, carbon dioxide, and an oxygen-comprising compound, wherein the oxygen source is in pure form or a liquid or gaseous mixture; and (IV) irradiating, thermally treating, or irradiating and thermally treating the oxygen treated coated substrate, to form the silicon layer comprising suboxide structures on a surface of the layer.