发明名称 |
Substrate processing apparatus, method of manufacturing semiconductor device and program |
摘要 |
Provided is a substrate processing apparatus. The substrate processing apparatus includes: a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees. |
申请公布号 |
US9153430(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201213725953 |
申请日期 |
2012.12.21 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
Noda Takaaki;Wang Jie |
分类号 |
H01L21/31;H01L21/02;H01L21/673;C23C16/40;C23C16/455 |
主分类号 |
H01L21/31 |
代理机构 |
Edell, Shapiro & Finnan LLC |
代理人 |
Edell, Shapiro & Finnan LLC |
主权项 |
1. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees. |
地址 |
Tokyo JP |