| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
A semiconductor device includes a first conductive layer extending in a first direction, a second conductive layer extending in a second direction and disposed over the first conductive layer, the first and second directions being substantially perpendicular to each other, and a variable resistance layer disposed over the first conductive layer, the variable resistance layer extending in the second direction. An upper portion of the variable resistance layer is disposed between lower portions of two neighboring second conductive layers including the second conductive layer. |
| 申请公布号 |
US9153780(B2) |
申请公布日期 |
2015.10.06 |
| 申请号 |
US201514696059 |
申请日期 |
2015.04.24 |
| 申请人 |
SK Hynix Inc. |
发明人 |
Ha Taejung |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first conductive layer extending in a first direction; a second conductive layer extending in a second direction and disposed over the first conductive layer, the first and second directions being substantially perpendicular to each other; an insulation layer disposed between two neighboring second conductive layers including said second conductive layer; and a variable resistance layer extending in the second direction and disposed between the first and second conductive layers. |
| 地址 |
Icheon KR |
