Semiconductor device and manufacturing method thereof

摘要

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

主权项

1. A semiconductor device comprising:
a plurality of pixels arranged in a matrix, each of the plurality of pixels comprising:
a photoelectric conversion element;a signal charge accumulation portion;a charge accumulation control transistor, wherein one of a source and a drain of the charge accumulation control transistor is electrically connected to the photoelectric conversion element and the other of the source and the drain of the charge accumulation control transistor is electrically connected to the signal charge accumulation portion; wherein a charge accumulation operation by the photoelectric conversion element is performed in the plurality of pixels at substantially the same time, and a read operation of a signal from each of the plurality of pixels is performed per row, and wherein gates of the charge accumulation control transistors in the plurality of pixels are electrically connected to each other.