Chip, electrostatic discharge protection device and fabrication thereof

摘要

An electrostatic discharge protection device is disclosed. The electrostatic discharge protection device comprises a N+ well, a P doping region, a first N doping region, a plurality of N sub-doping regions, a first N+ doping region, a first P+ doping region, a second N+ doping region, and a second doping region. The P doping region is disposed in the N+ well. The first N doping region is disposed in the P doping region. The plurality of N sub-doping regions is disposed in parallel in the P doping region. The first N+ doping region is disposed in the first N doping region. The first P+ doping region is disposed in the first N doping region. The second N+ doping region is disposed in the P doping region.

主权项

1. An electrostatic discharge protection device, comprising:
an N well; a P type doping region, disposed in the N well; a first N type doping region, disposed in the P type doping region; a plurality of N type sub-doping regions, disposed in the P type doping region in parallel, wherein the N type sub-doping regions do not contact to the first N type doping region, and the N type sub-doping regions are electrically connected to a first source rail-line; a first N+ type doping region, disposed in the first N type doping region; a first P+ type doping region, disposed in the first N doping region, wherein the first N+ doping region and the first P+ doping region are electrically connected to a pad; a second N+ doping region, disposed in the P type doping region, wherein second P+ type doping region and the second N+ doping region are electrically connected to a second source rail-line; wherein the N type sub-doping regions are disposed between the first N type doping region and the second N+ doping region; wherein when the first source rail-line is electrically connected to a system voltage and the second source rail-line is electrically connected to a ground voltage, there is a depletion region generated between the N type sub-doping region and the P type doping region so as to block a channel current between the first N+ type doping region and the second N+ type doping region.