发明名称 |
Reliable electrical fuse with localized programming and method of making the same |
摘要 |
An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact. |
申请公布号 |
US9153546(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201414454041 |
申请日期 |
2014.08.07 |
申请人 |
International Business Machines Corporation |
发明人 |
Li Yan Zun;Li Zhengwen;Pei Chengwen;Yu Jian |
分类号 |
H01L21/332;H01L23/52;H01L23/62;H01L21/84;H01L23/525;H01L27/12;G11C17/16;H01L21/02;H01L21/285;H01L21/768;H01L21/8238 |
主分类号 |
H01L21/332 |
代理机构 |
Hoffman Warnick LLC |
代理人 |
Cai Yuanmin;Hoffman Warnick LLC |
主权项 |
1. A method for making an electrical fuse, the method comprising the steps of:
dividing a silicon substrate into a first region, a second region adjacent to the first region, and a third region adjacent to the second region, using shallow trench isolation; creating a first recess in the first region and a second recess in the second region, using reactive ion etching; growing silicon germanium in the first recess and the second recess; forming silicide in the first region, above the silicon germanium grown in the first recess; and forming an anode contact and a cathode contact in the first region adjoining the silicide. |
地址 |
Armonk NY US |