VTFT with gate aligned to vertical structure

摘要

A thin film transistor includes a post on a substrate. The post has a height dimension extending away from the substrate to a top portion of the post which extends a distance beyond a bottom portion of the post in a direction parallel to the substrate to define a reentrant profile. A conformal conductive gate layer is located on an edge of the post in the reentrant profile and not over the top portion of the post, and includes a portion that extends along the substrate. A conformal insulating layer is on the gate layer in the reentrant profile. A conformal semiconductor layer is on the insulating layer in the reentrant profile. First and second electrodes are located in contact with first and second portions of the semiconductor layer over the top portion of the post and not over the top portion of the post, respectively.

主权项

1. A thin film transistor comprising:
a substrate; a post on the substrate, the post having a height dimension extending away from the substrate to a top portion of the post, the top portion of the post extending a distance beyond a bottom portion of the post in a direction parallel to the substrate to define a reentrant profile; a conformal conductive gate layer on an edge of the post in the reentrant profile and not over the top portion of the post, the conformal conductive gate layer including a portion that extends along the substrate; a conformal insulating layer on the gate layer in the reentrant profile; a conformal semiconductor layer on the insulating layer in the reentrant profile; a first electrode located in contact with a first portion of the semiconductor layer over the top portion of the post; and a second electrode located in contact with a second portion of the semiconductor layer not over the top portion of the post.