| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a pillar-shaped semiconductor layer and a sidewall having a laminated structure. The laminated structure includes an insulating film and polysilicon, and the laminated structure is on an upper sidewall of the first pillar-shaped semiconductor layer. A top of the polysilicon is electrically connected to a top of the pillar-shaped semiconductor layer. | ||
| 申请公布号 | US9153660(B2) | 申请公布日期 | 2015.10.06 |
| 申请号 | US201514645727 | 申请日期 | 2015.03.12 |
| 申请人 | UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. | 发明人 | Masuoka Fujio;Nakamura Hiroki |
| 分类号 | H01L29/76;H01L29/423;H01L29/78;H01L29/10 | 主分类号 | H01L29/76 |
| 代理机构 | Brinks Gilson & Lione | 代理人 | Brinks Gilson & Lione |
| 主权项 | 1. A semiconductor device comprising: a pillar-shaped semiconductor layer; and a sidewall having a laminated structure comprising an insulating film and polysilicon, the sidewall on an upper sidewall of the pillar-shaped semiconductor layer, wherein a top of the polysilicon of the sidewall is electrically connected to a top of the pillar-shaped semiconductor layer. | ||
| 地址 | Peninsula Plaza SG | ||