Method of fabricating high voltage device

摘要

A method of fabricating a high voltage device includes the step of forming a patterned photoresist layer on a conductive layer and a dielectric below the conductive. The conductive layer and the dielectric layer are patterned by taking the patterned photoresist layer as a mask. Subsequently the patterned photoresist layer is shrunk. The conductive layer and the dielectric layer are then patterned by taking the shrunk photoresist layer as a mask.

主权项

1. A method of fabricating a high voltage device, comprising:
providing a substrate having a dielectric layer, a conductive layer and a photoresist layer disposed on the substrate from bottom to top; patterning the photoresist layer to form a patterned photoresist layer having a first width; performing a first patterning step to pattern the conductive layer and the dielectric layer by taking the patterned photoresist layer as a first mask; forming two lightly doped source/drain regions in the substrate at two sides of the conductive layer by implanting dopants into the substrate, and wherein dopants penetrate the dielectric layer before entering the substrate; after forming the lightly doped source/drain regions, shrinking the first width of the patterned photoresist layer to a second width; performing a second patterning step to pattern the conductive layer and the dielectric layer by taking the shrunk photoresist layer as a second mask so as to form the dielectric layer into a step profile; and removing the shrunk photoresist layer.