Semiconductor device with selectively etched surface passivation

摘要

A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
defining an active area of the semiconductor device along a surface of a semiconductor substrate; depositing an etch stop dielectric layer on the surface in the active area; patterning the etch stop dielectric layer to expose a portion of the active area; depositing a passivation layer on the etch stop dielectric layer and on the surface of the semiconductor substrate in the exposed portion of the active area; and defining a gate area by dry etching the passivation layer.