Semiconductor device with buried bit line and method for fabricating the same

摘要

A semiconductor device includes an active body having two sidewalls facing each other in a lateral direction, a junction formed in a sidewall of the two sidewalls, a dielectric layer having an open portion to expose the junction and covering the active body, a junction extension portion having a buried region to fill the open portion, and a bit line coupled to the junction extension portion.

主权项

1. A semiconductor device comprising:
a plurality of active bodies isolated by a plurality of trenches and having two sidewalls; a plurality of junctions formed on a sidewall of the sidewalls of the respective active bodies; a dielectric layer having a plurality of open portions to expose the respective junctions and covering both sidewalls of the active bodies; a plurality of buried bit lines formed over the dielectric layer and partially filling the respective trenches; and a plurality of junction extension portions filling the respective open portions and formed between the buried bit lines and the junctions, wherein the junction extension portions are formed over the plurality of buried bit lines.