Scaling of filament based RRAM

摘要

A solid state memory comprises a top electrode, a bottom electrode and an insulating switching medium that is disposed at a thickness based on a predetermined function. The insulating switching medium generates a conduction path in response to an electric signal applied to the device. The thickness of the insulating switching medium is a function of a filament width of the conduction path and operates to prevent rupture of a semi-stable region. The semi-stable region maintains filament structure over time and does not degrade into retention failure. The solid state memory can comprise one or more conducting layers that can operate to control the conductance at an on-state of the memory and offer oxygen vacancies or metal ions to the switching medium. The function of the thickness of the insulating switching medium can vary depending upon the number of conduction layers disposed at the insulating switching medium.

主权项

1. A solid state memory cell, comprising:
a switching medium having a first surface and a second surface, wherein the switching medium is formed to have a thickness; a first electrode layer adjacent to the first surface of the switching medium, comprising a source of ions that are at least in part mobile within the switching medium; a second electrode layer located proximate to the second surface of the switching medium on an opposite side of the switching medium to the first electrode layer; and a first conductive layer disposed between the switching medium and the second electrode layer; and a second conductive layer disposed between the switching medium and the first electrode layer; wherein the switching medium includes a conductive path, at least a portion of which comprises a filament having a targeted filament width, that is configured to form between the first electrode layer and the second electrode layer in response to an electric signal; wherein the conductive path comprises a first region with a radius that is related to the targeted filament width in a ratio within a range of about 0.2 to about 0.5; wherein the thickness of the switching medium is related to the radius in a ratio from a range of approximately 1:2.44 to approximately 1:5; and wherein the thickness of the switching medium is determined in response to the targeted filament width.