| 发明名称 | Sintered oxide body, target comprising the same, and oxide semiconductor thin film | ||
| 摘要 | An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08. | ||
| 申请公布号 | US9153438(B2) | 申请公布日期 | 2015.10.06 |
| 申请号 | US201113699851 | 申请日期 | 2011.05.24 |
| 申请人 | IDEMITSU KOSAN CO., LTD. | 发明人 | Ebata Kazuaki;Tomai Shigekazu;Yano Koki;Inoue Kazuyoshi |
| 分类号 | C04B35/01;H01L21/02;C04B35/622;C04B35/626;C23C14/08;C23C14/34;H01L21/00;H01B1/08;H01L29/786;B82Y30/00 | 主分类号 | C04B35/01 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
| 主权项 | 1. An oxide sintered body having an atomic ratio Al/(Al+In) of 0.01 to 0.08 wherein the oxide sintered body is formed of indium oxide having a bixbyite structure in which aluminum atoms are in the solid-solution state in the indium oxide, and 98 vol % or more of the crystal structure of the oxide sintered body is an indium oxide crystal having the bixbyite structure. | ||
| 地址 | Tokyo JP | ||