Resistor and resistance element

摘要

A resistance element that includes a resistor made of a thin film containing VO2 as a main component and at least one of W, Nb, Mo and Ti as an additive element. The thin film has a plurality of layer regions distributed in the direction of thickness thereof, and amounts of the additive elements doped in the layer regions are different from each other between the adjacent layer regions. Terminal electrodes are disposed such that a current flows through the plural layer regions of the resistor. Preferably, an interval at which the plural layer regions are distributed is selected to be not less than 8 nm and not more than 35 nm.

主权项

1. A resistor comprising:
a film containing vanadium dioxide as a main component and at least one of tungsten, niobium, molybdenum and titanium as an additive element, wherein the film has a plurality of layer regions distributed in a thickness direction thereof, and an amount of the additive element doped in the plurality of layer regions is different between adjacent layer regions of the plurality of layer regions.