发明名称 |
Page buffer circuit |
摘要 |
A page buffer circuit is coupled to a bit line of a memory array. The page buffer circuit includes a latch storing different data during different phases of a multi-phase program operation. A preparation phase is after the program phase and after the program verify phase of the present multi-phase program operation. For the preparation phase, the control circuitry causes the latch to store the preparation data indicating whether to program the memory cell in a subsequent multi-phase program operation following the present multi-phase program operation. Results of the program verify phase, and contents of the latch at a start of the present multi-phase program operation, are sufficient to determine the preparation data. |
申请公布号 |
US9153328(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201414319457 |
申请日期 |
2014.06.30 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Hung Ji-Yu |
分类号 |
G11C16/04;G11C16/10;G11C16/26;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
Haynes Beffel & Wolfeld LLP |
代理人 |
Suzue Kenta;Haynes Beffel & Wolfeld LLP |
主权项 |
1. An apparatus comprising:
a page buffer circuit including:
a sense node coupled to a bit line of a memory array;a latch; anda plurality of transistors connected in series between the sense node and the latch; including:
a first transistor having a control terminal coupled to the latch, a first current carrying terminal coupled to the latch, and a second current carrying terminal;a second transistor having a control terminal, a first current carrying terminal coupled to the sense node, and a second current carrying terminal coupled to the second current carrying terminal of the first transistor. |
地址 |
Hsinchu TW |