Solid memory

摘要

Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.

主权项

1. A method for recording data in a solid memory mainly made of tellurium (Te), comprising:
recording data in the solid memory by causing phase-transformation of a substance constituting the solid memory so as to change electric characteristics of the solid memory, the substance including a laminated structure of artificial superlattices, the laminated structure including alternating first and second thin film layers of binary alloys, the phase-transformation being caused by germanium (Ge) atoms reversibly and anisotropically diffusing from the first thin film layer to interfaces between the first thin film layer and the second thin film layer.