发明名称 |
Actinic-ray- or radiation-sensitive resin composition, actinic-ray-or radiation-sensitive film therefrom, method of forming pattern, process for manufacturing semiconductor device, semiconductor device and compound |
摘要 |
Provided is an actinic-ray- or radiation-sensitive resin composition including a compound that when exposed to actinic rays or radiation, generates any of acids of general formula (I) below.; |
申请公布号 |
US9152047(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201414451814 |
申请日期 |
2014.08.05 |
申请人 |
FUJIFILM Corporation |
发明人 |
Kawabata Takeshi;Tsubaki Hideaki;Takizawa Hiroo |
分类号 |
G03F7/004;G03F7/027;G03F7/039;G03F7/038;C08K5/42;G03F7/11;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. An actinic-ray- or radiation-sensitive resin composition comprising a compound that when exposed to actinic rays or radiation, generates any of acids of general formula (I) below, in which L1 represents a single bond, —O—, —S—, —C(═O)—, —C(═O)O—, —OC(═O)—, —S(═O)—, —S(═O)2—, an optionally substituted methylene group or an optionally substituted ethylene group; Ar1 represents an aryl group; R1 represents a monovalent substituent, provided that at least one R1 represents a group having two or more carbon atoms, and that when n is 2 or greater, two or more R1s may be identical to or different from each other and may be connected to each other to thereby form a ring; m is an integer of 1 to 4; and n is an integer of 2 to 5. |
地址 |
Tokyo JP |