| 主权项 |
1. A method of polishing a silicon wafer, comprising:
providing a silicon wafer; providing a chemical mechanical polishing composition, comprising:
water;optionally, an abrasive;a cation according to formula (I): wherein R1, R2, R3, R4 are independently selected from the group consisting of a hydrogen and a C1-10 alkyl group, a C1-10 aryl group, a C1-10 arylalkyl group and a C1-10 alkylaryl group; and,
piperazine or a piperazine derivative according to formula (II) wherein R5 is selected from the group consisting of a hydrogen, a C1-10 alkyl group, a C1-10 aryl group, a C1-10 arylalkyl group and a C1-10 alkylaryl group; and,
a quaternary ammonium compound selected from the group consisting of tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetraisopropyl ammonium hydroxide, tetracyclopropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraisobutyl ammonium hydroxide, tetra tert-butyl ammonium hydroxide, tetra sec-butyl ammonium hydroxide, tetracyclobutyl ammonium hydroxide, tetrapentyl ammonium hydroxide, tetracyclopentyl ammonium hydroxide, tetrahexyl ammonium hydroxide, tetracyclohexyl ammonium hydroxide, and mixtures thereof;wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12; and, wherein the chemical mechanical polishing composition exhibits a silicon removal rate of at least 300 nm/min; providing a chemical mechanical polishing pad; providing a polishing machine; installing the silicon wafer and the chemical mechanical polishing pad in the polishing machine; creating dynamic contact at an interface between the chemical mechanical polishing pad and the silicon wafer with a down force of ≧0.5 kPa; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the silicon wafer; wherein the chemical mechanical polishing composition exhibits a stable silicon removal rate of at least 675 nm/min with a platen speed of 115 revolutions per minute, a carrier speed of 100 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 29.4 kPa on a polishing machine with a 500 mm platen, wherein the chemical mechanical polishing pad used comprises a polyurethane impregnated, non-woven polyester felt pad. |
