SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

The present invention provides a semiconductor device which increases an operational performance of a transistor by using silicon carbide for a channel layer of a transistor. The semiconductor device includes: a field insulator film formed on a substrate; a pin-shaped active pattern, defined by the field insulating film and extended in a first direction, including a lower pattern and an upper pattern sequentially stacked on a substrate, wherein the lower pattern is a silicon pattern and the upper pattern is a silicon carbide (SiC) pattern and an upper surface of the pin-shaped active pattern is the upper pattern, and a first section and a second section arranged on both sides of the first section in the first direction; a gate electrode extended in a second direction different from the first direction and formed on the top of the first section; and a source/drain formed in the second section.