| 摘要 |
PROBLEM TO BE SOLVED: To reduce a peak current in a booster circuit.SOLUTION: A semiconductor memory device includes: a memory cell array having an arrayed memory cells; a voltage generator circuit for generating a voltage to be applied to the memory cell array; and a control circuit for controlling the memory cell array and the voltage generator circuit. The voltage generator circuit includes: a plurality of booster circuits connected in tandem between an input terminal and an output terminal; and a switching circuit to make a short circuit between the input terminal and either one of the plurality of booster circuits in tandem connection. The control circuit increases the number of the booster circuits to be driven among the plurality of booster circuits, during a period when an output voltage output from the output terminal changes, and controls the conduction state of the switching circuit. |
