发明名称 ORGANIC TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To enhance mobility in an organic transistor where a self-organization single molecular layer is interposed between an organic semiconductor thin film and a gate insulator film.SOLUTION: An organic transistor includes a substrate 11, a gate electrode 12 formed on the substrate 11, a gate insulator film 13 having a flat surface formed on the gate electrode 12 so as to cover the gate electrode 12, a self-organization single molecular layer 14 formed on the gate insulator film 13 in contact therewith, an organic semiconductor thin film 15 formed on the self-organization single molecular layer 14 in contact therewith, and a source electrode 16 and a drain electrode 17 formed on the self-organization single molecular layer 14 in contact with the organic semiconductor thin film 15, at positions corresponding to both ends of the gate electrode 12 so as to be spaced apart from each other. The gate insulator film 13 is composed of alumina, and the chlorine concentration in the alumina is 1×10atoms/cmor more.</p>
申请公布号 JP2015177100(A) 申请公布日期 2015.10.05
申请号 JP20140053513 申请日期 2014.03.17
申请人 DENSO CORP 发明人 KATO TETSUYA
分类号 H01L29/786;H01L21/28;H01L21/283;H01L21/316;H01L21/336;H01L29/423;H01L29/49;H01L51/05;H01L51/30 主分类号 H01L29/786
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