| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which has less electric resistance while ensuring a thick nickel oxide (NiO) layer in an electrode structure including the nickel oxide layer.SOLUTION: A semiconductor device of the present embodiment comprises: a semiconductor layer; a lower electrode layer; a nickel oxide (NiO) layer; and an upper electrode layer, in which the nickel oxide (NiO) layer is doped with lithium (Li). Further, a thickness of the nickel oxide (NiO) layer is larger than a thickness of a nickel (Ni) layer.</p> |
