MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a highly-reliable semiconductor memory at low cost.SOLUTION: A first side wall film 64 is formed on a side wall of a core material film 63, and a second side wall film 65 is formed on a side wall of the first side wall film 64. A mask layer 67 is formed to cover the second side wall film 65. The mask layer 67 and the first side wall film 64 are processed into plural island patterns. A base mask 62 is processed by using the core material film 63, the first side wall film 64, the second side wall film 65 and the mask layer 67 as a mask. Plural mask slits extending in a first direction and plural mask holes are formed simultaneously on the base mask 62.