| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving field relaxation effect caused by a source field plate.SOLUTION: A semiconductor device comprises: a drain electrode 12d and a source electrode 12s provided on a surface of a semiconductor substrate 11; a first insulation film 13 formed on the surface of a semiconductor substrate 11 exposed from their electrodes; a second insulation film 14 formed on a surface of the first insulation film 13 so as to form a space 15 between the surface of the first insulation film 13 and the second insulation film 14; a gate electrode 18 consisting of a leg part 18a arranged in an opening part passing through the first and second insulation films 13, 14 and an eaves 18b provided on the surface of the second insulation film 14; a source field plate 19 provided below the eaves 18b of the gate electrode 18 in a space 15 so as to insulate from the gate electrode 18; and a wiring provided on the surface of the first insulation film 13 so as to detour the leg part 18a of the gate electrode 18 and electrically connecting the source electrode 12s and the source field plate 19.</p> |
