SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can reduce parasitic capacitance of a through electrode part.SOLUTION: A semiconductor device includes a second chip which is laminated on a first chip on the side of a first wiring layer. The second chip has: a second semiconductor layer having a second circuit surface opposite to the first wiring layer and a second rear face on the opposite side of the second circuit surface; a second wiring layer which is provided on the second circuit surface and connected to the first wiring layer of the first chip; and a second through electrode which is provided to pierce the second semiconductor layer and connected to a second wiring layer. The semiconductor device includes a third chip laminated on a second rear face side of the second chip. The third chip has: a third semiconductor layer having a third circuit surface and a third rear face opposite to the second chip; a third wiring layer provided on the third circuit surface; and a third through electrode which is provided to pierce the third semiconductor layer and connected to the third wiring layer and bump-connected with the second through electrode of the second chip.