| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrode structure which has high withstand voltage and which is easily manufactured.SOLUTION: A semiconductor device comprises: a semiconductor layer 10; a gate electrode 20 provided on the semiconductor layer 10; an insulation film 30; and a source electrode 60 and a drain electrode 70. The source electrode 60 and the drain electrode 70 are provided at positions in the insulation film 30 and at a distance from the gate electrode 20, in which one end contacts the semiconductor layer 10 and the other end is exposed on the side of a second surface 30b. The semiconductor device further comprises: a first field plate electrode 40 provided on the gate electrode 20 and on the insulation film 30, and a second field plate electrode 50 which is provided on the insulation film 30 and located between the first field plate electrode 40 and the drain electrode 70. A thickness T1 of the insulation film between the first field plate electrode 40 and the semiconductor layer 10 is thinner than a thickness T2 of the insulation film between the second field plate electrode 50 and the semiconductor layer 10. |
